1n4933gp thru 1n4937gp document number 88509 15-sep-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * do-204al (do-41) ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly by patent no. 3,930,306 glass passivated junction fast switching rectifier major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 600 v i fsm 30 a t rr 200 ns i r 5.0 a v f 1.2 v t j max. 175 c features ? superectifier struct ure for high reliability condition ? cavity-free glass-passivated junction ? fast switching for high efficiency ? low leakage current ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 260 c, 40 seconds typical applications for use in fast switching re ctification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication mechanical data case: do-204al, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n4933gp 1n4934gp 1n4935gp 1n4936gp 1n4937gp unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 v maximum rms voltage v rms 35 70 145 280 420 v maximum dc blocking voltage v dc 50 100 200 400 600 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 75 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88509 15-sep-05 1n4933gp thru 1n4937gp vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol 1n4933gp 1n4934gp 1n4935gp 1n4936gp 1n4937gp unit maximum instantaneous forward voltage at 1.0 a v f 1.2 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 100 a maximum reverse recovery time at i f = 1.0 a, v r = 30 v t rr 200 ns typical junction capacitance at 4.0 v, 1 mhz c j 15 pf parameter symbol 1n4933gp 1n4934gp 1n4935gp 1n4936gp 1n4937gp unit typical thermal resistance (1) r ja 55 c/w figure 1. forward current derating curve am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) 0 25 50 75 100 125 150 175 0 0.25 0.5 0.75 1.0 0.375" (9.5mm) lead length resisti v eor ind u cti v e load figure 2. maximum non-repetitive peak forward surge current 1 10 100 0 10 20 30 40 peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz t j = t j max. 8 .3 ms single half sine- w a v e
1n4933gp thru 1n4937gp document number 88509 15-sep-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u sfor w ard v oltage ( v ) instantaneo u sfor w ard c u rrent (a) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 0.01 0.1 1 10 t j = 25 c p u lse w idth = 300 s 1% d u ty cycle percent of rated peak re v erse v oltage (%) 0 20 40 60 8 0 100 0.01 0.1 1 10 20 instantaneo u s re v erse c u rrent ( a) t j = 125 c t j = 25 c t j = 75 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p t, p u lse d u ration (sec.) typical thermal impedance (c w ) 0.01 0.1 1 10 100 0.1 1 10 100 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) dia. do-204al (do-41)
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